PHOTOELECTRIC CONVERSION DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a photoelectric conversion device that can obtain sufficient device characteristics, such as high light-transmission and low electric-resistance characteristics, even if low-cost zinc oxide(ZnO) is used as the translucent electrode. SOLUTION: On a glass substrate 1, the translucent electrode 2, a photoelectric conversion layer 3, and a back plate 4 are laminated and formed in this order. In the translucent electrode 2, first and second translucent conductive films 2a and 2b are laminated successively from the side of the glass substrate 1. In this case, the first translucent conductive film 2a is made of a non-doped zinc oxide and has a thickness of approximately 1,000Å, and the second translucent conductive film 2b is made of Al-doped zinc oxide and has a thickness of approximately 7,000Å.