发明名称 |
METHOD AND APPARATUS FOR MANUFACTURING SILICON BASED THIN FILM, AND PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING IT |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a silicon-based thin film having a good priority orientation and grown columnar crystal, and a photovoltaic device and a method for manufacturing it. SOLUTION: A substrate is heated to a predetermined temperature in a reaction chamber, silicon-containing gas and hydrogen gas are supplied between the substrate and a discharge electrode, a high frequency electric power of a source frequency of 100 MHz to 300 MHz is applied between the discharge electrode and the substrate to produce a discharge plasma, and a thin-film- crystal-like silicon thin film is stack-formed on the substrate.</p> |
申请公布号 |
JP2002217114(A) |
申请公布日期 |
2002.08.02 |
申请号 |
JP20010010315 |
申请日期 |
2001.01.18 |
申请人 |
MITSUBISHI HEAVY IND LTD |
发明人 |
MORITA SHOJI;HORIE TETSUHIRO;TAKEUCHI YOSHIAKI;KONDO KATSUHIKO;NISHIMIYA TATSUYUKI;YAMAGUCHI KENGO |
分类号 |
C23C16/24;C23C16/46;H01L21/205;H01L31/04;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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