发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein plating work of base material, formation of solder resist and cleaning of residual flux are made unnecessary and manufacturing cost is reduced, and to provide a semiconductor device. SOLUTION: A region on a main surface of a bottom surface metal substrate 1 to which region an insulating substrate is soldered in the later process is cut and eliminated by using a rotary head 2, and an elimination region 3 is formed. Consequently, impurities such as organic matter and oxide on the main surface can be eliminated. Depth of cutting is set at least 0.1μm. The elimination region 3 is set to be a region having an area equivalent to a conductor pattern for soldering which is formed on the rear of an insulating substrate, or a region which is enlarged by about 0.2 mm from the peripheral part of the conductor pattern. The surface roughness by cutting is made Rz=1.5 (μm) or smaller when defined by using, e.g. 10 points average roughness.
申请公布号 JP2002217365(A) 申请公布日期 2002.08.02
申请号 JP20010014377 申请日期 2001.01.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAGASEKO JUNICHI;TAKAO HARUO;SENNENBARA NOZOMI
分类号 H01L25/07;H01L21/52;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
代理机构 代理人
主权项
地址