| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein variation in film thickness of an inter-layer insulating film, variation in polishing of a CMP, variation in rate of dry-etching, and the like are absorbed, for avoiding excessive etching and damage to a semiconductor substrate. SOLUTION: Under such condition as at least a dry-etching rate of an inter- layer insulating film is significantly slower than an inter-layer insulating film positioned outside of it, the inter-layer insulating film on the outer side is selectively etched to form a through hole.
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