| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implanting device which allows easily acquiring an ion beam current in a low energy region. SOLUTION: An ion implanting device is provided where ion is generated with an ion source 34, ion is drawn out by action of a draw-out electric field of a draw-out electrode 7 comprising an opening, an ion orbit is deflected/bent with a mass spectrometry magnet 39, and after mass spectrometry, a desired ion is implanted into a target substrate. By shifting/adjusting ion source position by a drive mechanism 36 of the ion source relative to the drawn-out electrode, the relative positional relationship between the ion source and the draw-out electrode side is changed.
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