| 摘要 |
PROBLEM TO BE SOLVED: To realize operation over a wide wavelength selection range with low consumption of power by increasing a temperature effectively in the vicinity of an active layer with respect to an optical semiconductor device. SOLUTION: A heating layer 3, constituted of a conductive semiconductor layer, is formed in the vicinity of the active layer 4 of a semiconductor laser which oscillates at a single wavelength, and is surrounded by a semi-insulating semiconductor layer 2.
|
