| 摘要 |
PROBLEM TO BE SOLVED: To suppress the generation of leakage current from a base to a collector region and to uniformized the thickness of a film in a base thin film, the distribution of germanium and the concentration of impurities. SOLUTION: This element is provided with an insulation film 317 including a collector area provided with an almost perpendicular sidewall, a collector 115 with which the inside of the collector region is filled and which projects over the insulation film, an oxide film 199 covering the side surface of the projected part of the collector, a first base semiconductor electrode 122 which is formed on the insulation film in a manner to cover the outer side surface of the oxide film, a base 125 in contact with the collector, and second base semiconductor electrode 123a which is formed on the first base semiconductor electrode, in a manner of extending over the side of the base.
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