| 摘要 |
PROBLEM TO BE SOLVED: To suppress reduction in hFE in a high current region as well as the increased reactive current in a base current. SOLUTION: This semiconductor device is provided with a second conductivity-type epitaxial layer on a first conductivity-type semiconductor substrate with a second conductivity-type embedded diffusion layer in between, and it is also provided with first conductive type upper and lower diffused layers or a single diffused layer that is for splitting circuit constituent elements integrated on the surface of the epitaxial layer. Lateral transistor emitter and collector, as an element among the circuit constituent elements, are of the same conductivity-type as a first conductivity-type upper diffused layer, the upper and lower diffused layers or single diffusion layer, and have identical concentration of impurities.
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