| 摘要 |
PROBLEM TO BE SOLVED: To suppress the diffusion through a barrier metal film of a dopant in a polycrystalline silicon film constituting a dual gate electrode and to reduce surface resistance between a metal film on the barrier metal film and the polycrystalline silicon film. SOLUTION: In a semiconductor device, element active areas of an N channel region 101 and a P channel region 102 are adjacently formed and gate electrodes 105 and 106 are formed so that they straddle over the channel regions and an element separation oxide film 103 separating both channel regions. In the gate electrodes 105 and 106, the polycrystalline silicon films 207 and 208, a first barrier metal film 209, a second barrier metal film 210 and a metal film 211 are sequentially laminated from below. The first barrier metal film 209 is removed from the boundary part of the N channel area 101 and the P channel area 102.
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