发明名称 METHOD FOR TREATING METAL SURFACE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To realize a clean surface of a cupper wiring, by removing an oxide film in high repeatability without generating ruggedness on the surface of the copper wiring. SOLUTION: After a vacuum chamber 101, in which a substrate 104 having copper wiring is housed, is evacuated by a vacuum pump, a gas (e.g. hydrogen) atmosphere is generated, and the substrate 104 is heated by a heating stage 101b at 400 deg.C for a minute, for the surface of the wiring to be cleaned, where the gas atmosphere reduces copper oxides, and includes a trace quantity of oxygen, and more specifically, a oxygen concentration in which a segregation of oxygen occurs on a copper surface, and a generation of an oxide layer does not occur.
申请公布号 JP2002217199(A) 申请公布日期 2002.08.02
申请号 JP20010012369 申请日期 2001.01.19
申请人 FUJITSU LTD 发明人 MATSUMIYA YASUO
分类号 H01L21/302;H01L21/306;H01L21/3205;H01L23/52;(IPC1-7):H01L21/320 主分类号 H01L21/302
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