METHOD FOR DEPOSITING NITROGEN-CONTAINING COMPOUND SEMICONDUCTOR AND METHOD FOR DEPOSITING NIRIDE-BASED GROUP III-V COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for easily depositing a compound semiconductor containing nitrogen of good crystallinity or a semiconductor of a nitride-based group III-V compound. SOLUTION: When a compound semiconductor containing nitrogen or a semiconductor of a nitride-based group III-V compound is deposited by a vapor deposition method, e.g. an organic metal chemical vapor deposition method, an organic compound which contains at least one nitrogen atom and at least two groups of which a molar weight is at least larger than 36 is bonded to the nitrogen atom, e.g. a diisopropylamine is used as a nitrogen atom.