| 摘要 |
PROBLEM TO BE SOLVED: To reduce dark current by increasing a band offset of conductive band and decreasing the band offset of valency electron band. SOLUTION: There is provided an infrared-ray receiving element which utilizes in-band transition of the electron conductive band due to the absorption of infrared-rays. This infrared-ray sensitive element has a multiple quantum well structure, in the light absorbing layer, in which the quantum well layer material is formed as InAsP and a barrier layer material as InP.
|
