SILICON WAFER FOR HEAT TREATMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To inhibit crystal dislocation resulting from sliding friction between a thermally treated wafer supported by a wafer supporter and the wafer supporter. SOLUTION: The silicon wafer 22 for heat treatment is supported by the wafer supporter and thermally treated, and an oxide film 24 is formed to the peripheries of one or both main surfaces of the wafer or peripheries containing the whole or edge sections or the whole. A method for forming the silicon wafer 22 for heat treatment contains a process in which resist layers 26 are formed to the oxide film in the periphery of one main surface of the silicon wafer 22 or the peripheries comprising the whole or the edge sections or the whole or the oxide films 24 in the peripheries comprising the edge sections of both main surfaces, a process in which the oxide films 24 not covered with the resist layers 26 are removed, and a process in which the peripheral oxide films 24 comprising the periphery of one main surface or the peripheries comprising the whole or the edge sections or the whole or the edge sections of both main surfaces are left by removing the resist layers 26.