| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device, in which etching products present on the surface of the under film of an SiO2 film are surely removed after etching the SiO2 film. SOLUTION: A poly Si film is formed on a substrate after forming a diffusion layer or the like. The SiO2 film is formed thereon. A trench is formed in the substrate. The SiO2 film is removed by dry etching using a gas containing CHF3 and CF4 to expose the Poly Si. For the surface of the Poly Si film, APM cleaning, HPM cleaning and SPM cleaning are performed in this order. The etching products on the Poly Si film is oxidized by O2 plasma to a soot state residue. Then, the soot state residue is removed by the APM cleaning and the HPM cleaning. The semiconductor device is completed by forming interlayer film and wiring.
|
