| 摘要 |
PROBLEM TO BE SOLVED: To effectively realize a series of processes of etching, purification, regeneration and reuse by effectively removing NOx contained in a solution after etching process. SOLUTION: An equipment for processing a solution for treating a semiconductor wafer 1 using a chemical solution containing nitric acid and hydrofluoric acid as an etching solution provides a supporting means 20 for levelly supporting and rotating the semiconductor wafer 1, a chemical solution ejecting means 22 for ejecting the etching solution, and a pure water ejecting means 22 that ejects pure water. The equipment comprises recovery means 21A that recovers etching solution used for the treatment, a recovery tank 3 that stores a recovered etching solution recovered by recovery means 21A, a gas suction mouth 3b provided at the bottom side of the recovery tank 3 for inducing gas like inert gas, and means for measuring absorbency 33 and 34 by which the end point of the purification treatment of the recovered etching solution can be detected with a gas induced from the gas suction mouth 3b.
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