| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device that can obtain full device characteristics, such as low-resistance and high weather-resistance characteristics, even if low-cost zinc oxide(ZnO) is used as the translucent electrode. SOLUTION: On a glass substrate 1, the translucent electrode 2, a photoelectric conversion layer 3, and a back plate 4 are laminated and formed in this order. For the translucent electrode 12, in a ZnO film where Si and Al are doped, the amount doped for Al is fixed over the entire region, but the amount doped for Si is different in the thickness direction, is set at a maximum near the interface with the glass substrate 1, and is reduced stepwise, as going toward the side of the photoelectric conversion layer 3 and becomes minimum near the interface with the photoelectric conversion layer 3.</p> |
