| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device consisting of nonvolatile memory cells equipped with magneto-resistance elements such as a GMR element and a TMR element in which the number of times of repeat writing is reduced and the service life of the device is improved. SOLUTION: The memory cell is provided with a first MOS transistor and a second MOS transistor in which a sauce is grounded and a gate is connected to each other's drain, a first magneto resistance element inserted between the drain of the first MOS transistor and a power source line, and a second magneto resistance element inserted between the drain of the second MOS transistor and the power source line. The memory cell has further a first write means which applies a specified voltage to the gate of the first MOS transistor and the gate of the second MOS transistor according to write information, respectively, and a read means which detects the electrical potential of the drain of the first MOS transistor and the drain of the second MOS transistor to read information.</p> |
