发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve a power supply circuit in power supply efficiency. SOLUTION: A power MOS FET Q1, as the high side of a composite power MOS-FET PM which constitutes a DC-DC converter, is composed of a lateral MOS-FET, and a power MOS-FET Q2 as the low side of the composite power MOS-FET PM is composed of a vertical MOS-FET.
申请公布号 JP2002217416(A) 申请公布日期 2002.08.02
申请号 JP20010007191 申请日期 2001.01.16
申请人 HITACHI LTD 发明人 TAKAGAWA KYOICHI;SAKAMOTO MITSUZO;MATSUURA NOBUYOSHI;KOYANO MASAFUMI
分类号 G06F1/26;H01L23/495;H01L25/07;H01L25/18;H01L27/04;H01L27/088;H01L29/78 主分类号 G06F1/26
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