发明名称 THERMAL, STRESS ABSORBING INTERFACE STRUCTURE, WAFER LEVEL PACKAGE USING THE SAME, AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a thermal stress absorbing interface structure which is capable of improving a soldered joint in connection reliability and a method for manufacturing the same. SOLUTION: The thermal stress absorption interface structure 20 is equipped with an extended conductive bump pad 30 having a first edge face 32, a second edge face 34, and sides 30. While the thermal stress absorption interface structure 20 undergoes thermal cycles, the first edge face 32 makes an upward movement when the second edge face 34 makes a downward movement, and the first edge face 32 makes a downward movement when the second edge face 34 makes an upward movement. By this setup, the movements in the vertical direction due to the stress generated in the thermal cycles are absorbed, so that the generated stress can be absorbed or released.
申请公布号 JP2002217227(A) 申请公布日期 2002.08.02
申请号 JP20010232252 申请日期 2001.07.31
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM GU-SUNG;CHO TOGEN;SON MIN-YOUNG;KYO SHIIN
分类号 H01L23/12;H01L21/60;H01L23/13;H01L23/31;H01L23/34;H01L23/485;H05K1/02;H05K3/34 主分类号 H01L23/12
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