| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent a stain from being produced on the surface of a gold bump in a process of forming a gold bump electrode and to improve a step coverage of a plating electrode in so as to prevent a plating failure. SOLUTION: An connecting electrode 2 of an aluminum alloy is formed on an integrated circuit chip 1, and furthermore, a protective film 3 of Si3N4 is formed on the connecting electrode 2, and the circumferential side of an opening H provided to the protective film 3 is formed into a slope through a chemical dry etching method when the opening H is provided to the protective film 3 by dry etching. By this setup, treatment can be dispensed with, and an undercut UC is never formed. Furthermore, the plating electrode 4 formed thereon can be improved in the step coverage, and wet etching treatment can be surely carried out without causing any damage after the gold bump 6 is formed.</p> |
