发明名称 MASK FOR ELECTRON BEAM EXPOSURE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a mask for electron beam exposure having a highly accurate ultrafine pattern. SOLUTION: The mask for electron beam exposure comprises an electron shield film having a mask part 10 where a specified pattern to be transferred is formed, a film for supporting the electron shield film having through holes corresponding to the specified pattern, and a frame for supporting the supporting film on the outside of the mask part 10 wherein the electron shield film comprises a tantalum film 4 and the supporting film comprises a diamond film 3.</p>
申请公布号 JP2002217094(A) 申请公布日期 2002.08.02
申请号 JP20010014338 申请日期 2001.01.23
申请人 NTT ADVANCED TECHNOLOGY CORP;RIIPURU:KK 发明人 KURIHARA KENJI;YOSHIHARA HIDEO;SHIMAZU NOBUO
分类号 G03F1/20;G03F1/40;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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