发明名称 |
MASK FOR ELECTRON BEAM EXPOSURE AND ITS MANUFACTURING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a mask for electron beam exposure having a highly accurate ultrafine pattern. SOLUTION: The mask for electron beam exposure comprises an electron shield film having a mask part 10 where a specified pattern to be transferred is formed, a film for supporting the electron shield film having through holes corresponding to the specified pattern, and a frame for supporting the supporting film on the outside of the mask part 10 wherein the electron shield film comprises a tantalum film 4 and the supporting film comprises a diamond film 3.</p> |
申请公布号 |
JP2002217094(A) |
申请公布日期 |
2002.08.02 |
申请号 |
JP20010014338 |
申请日期 |
2001.01.23 |
申请人 |
NTT ADVANCED TECHNOLOGY CORP;RIIPURU:KK |
发明人 |
KURIHARA KENJI;YOSHIHARA HIDEO;SHIMAZU NOBUO |
分类号 |
G03F1/20;G03F1/40;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 |
主分类号 |
G03F1/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|