| 摘要 |
PROBLEM TO BE SOLVED: To suppress variation of characteristics of heads caused by change in etch stop positions without reducing the number of heads to be obtained from a single wafer. SOLUTION: A lower electrode layer 2 and a lower metal layer 3 are formed on a substrate 1, and a laminated TMR film is formed on them. The TMR film consists of a lower ferromagnetic layer 4, a tunnel barrier layer 5, an upper ferromagnetic layer 6, a pinning layer 7 and a cap layer 8. A lower dummy electrode layer 32 and a lower dummy metal layer 33 are formed in an area where the terminals 23 are formed, and a dummy film having the same layers as the TMR film is formed further on them. When selectively etching from the cap layer 8 to halfway the lower ferromagnetic layer 4 to determine the shape of the tunnel joint, the dummy film is also etched. When etching, a measurement is carried out to identify the elements scattered from the TMR film and the dummy film, in order to control the position to stop etching. |
