NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To suppress dispersion on the structure of a memory element and on its characteristics by shortening the incubation time in the formation of a charge storage film which preventing the deterioration in the characteristics of the element. SOLUTION: A non-volatile semiconductor storage device has a plurality of dielectric films GD laminated on a semiconductor SUB and a gate electrode GE on the dielectric films GD. A plurality of the dielectric films GD contain a bottom dielectric film BTM on the semiconductor SUB and charge storage films CHS having charge storage capacity. In a process in which dielectrics constituting the charge storage films CHS are formed on the bottom dielectric film BTM, the dielectric (the first film CHS1) brought into contact with a boundary with at least the bottom dielectric film BTM in the dielectrics is formed by using atomic-layer deposition(ALD). Lattice consistency with a foundation surface is improved in the case of the formation of the charge storage films CHS in the charge storage films CHS formed in this manner, and the incubation time is shortened.