METHOD FOR THERMALLY TREATING BORON-DOPED SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method in which boron concentration in the direction of a boron depth in a wafer surface layer can be equalized sufficiently even to a boron-doped silicon wafer. SOLUTION: Boron concentration in the direction of the wafer depth of the wafer surface layer of the boron-doped silicon wafer is equalized by properly adding diborane into hydrogen annealing. The distribution of the boron concentration in the wafer surface layer can be adjusted by controlling the concentration of added diborane, and adjustment is enabled freely in which a concentration change is flattened towards the depthwise direction of the wafer or concentration is lowered or increased gradually.