| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD method and its apparatus which does not need a reversing process of a substrate and is capable of forming a thin film having a good thickness uniformity on both sides of the substrate. SOLUTION: At least two inductive coupling electrodes having an electrical supply portion and a ground portion are located in a vacuum chamber provided with a gas supply inlet and an exhaust outlet, a substrate holder which holds a circumferential portion of the substrate so as to expose both sides of the substrate is interposed between the two inductive coupling electrodes, a gas used for forming the thin film is introduced through the gas supply inlet, a high frequency electrical power is supplied to the electrical supply portion to produce the plasma along the inductive coupling electrodes, and the films are formed on both sides of the substrate simultaneously or in order. Moreover, a second gas supply line is connected with the vacuum chamber, and films different from each other are formed on both sides of the substrate simultaneously or in order. |
