| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the irregularities of an obtained thin-film transistor in the reversely staggered thin-film transistor. SOLUTION: The reversely staggered thin-film transistor is constituted in such a manner that the thin-film transistor has a gate electrode 102 formed on a glass substrate and composed of aluminum, an oxide film 103 formed on the surface of the gate electrode 102, a gate insulating film 104 formed on the oxide film 103 and the glass substrate and composed of silicon nitride, an N-type source region 108, an N-type drain region 108' and a channel forming region 109 formed onto the gate insulating film 104, a metallic wiring 110 formed onto the drain region 108' and the gate insulating film 104 and a picture-cell electrode 111 shaped on the source region 108 and the gate insulating film 104 and composed of ITO. The channel forming region 109 is brought to an amorphous state, and the picture-cell electrode 111 is brought into contact with the source region 108 and the gate insulating film 104.</p> |
