| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-stage imaging device in which a quantity of light to a photoelectric element or a light intensity is enhanced, whose structure and manufacturing process are simplified, which can be made low-cost, which shortens the time required for its manufacture and which can enhance a throughput and a production yield. SOLUTION: The solid-state imaging device is provided with a semiconductor substrate 1 on which the photoelectric element 10 is formed in each imaging pixel, an electrode 2 which is formed on the surface of the semiconductor substrate 1 so as to be connected to the photoelectric element 10, an interlayer insulating film 3 formed so as to cover the semiconductor substrate 1 and the surface of the electrode 2, a light blocking film 4 formed by installing a prescribed opening on its surface, a protective film 5 formed so as to cover the surface of the film and the surface of the film 3 exposed from the opening in the film 4, and a color filter 71 formed on its surface so as to be bent along the irregularity of the protective film 5. A flattened film and an OVP film in conventional cases are omitted.
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