DIODE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a diode that has a small amount for parasitic capacity, even though current-voltage characteristics do not vary, and to provide a method of manufacturing the diode. SOLUTION: A P+ impurity layer 14, facing the surface of an N+ impurity layer 13, is provided between the surface of the N+ impurity layer 13 and an N- impurity layer 21 in the N+ impurity layer 13, thus thickening the depletion layer on the bottom surface of the P+ impurity layer 14 with reduced junction capacity, as compared with the case where the N+ impurity layer 13 is jointed the bottom surface of the P+ impurity layer 14.