| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser annealing method that enables laser annealing of amorphous silicon always under optimum conditions. SOLUTION: Amorphous silicon for condition evaluation is laser annealed into polysilicon 2 by an excimer laser beam that has different fluences. The point at which the scattering intensity is the highest is detected on the surface of the polysilicon 2. It is possible to detect with ease the fluence when light is scattered most intensely regardless of the irradiation condition of the excimer laser beam. The fluence when light is scattered most intensely is determined as a specified value by adding a fixed fluence to the fluence that corresponds to the point at which the scattering intensity is the highest, and laser annealing can be executed always under optimum conditions by laser annealing the amorphous silicon based on the specified value. The amorphous silicon may be laser annealed with an excimer laser beam the energy density of which is adjusted by the transmittance of a variable attenuator.
|
