| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device which can keep it dielectric characteristics and increased physical thickness, and to prevent the generation of leakage current. SOLUTION: Gate insulation films 6 and 7 formed mainly of titanium oxide are formed on one main surface of a silicon substrate 1, and gate electrode films 8 and 9 are formed being in contact with the gate insulation films 6 and 7. The gate electrode films 8 and 9 are made mainly of ruthenium oxide or iridium oxide. The ruthenium oxide or iridium oxide, constituting the gate electrode films 8 and 9 in contact with the titanium oxide, is effective in preventing conductive elements in the gate electrode films 8 and 9 from diffusing and entering the titanium oxide constituting the gate insulation films 6 and 7. Thus, this semiconductor device can keep its dielectric characteristics and increased physical thickness, and can prevent generation of leakage current. |
