METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To efficiently perform processes to a semiconductor substrate, such as dry etching, and cleaning for removing foreign materials after the processes. SOLUTION: The method for fabricating a semiconductor device comprises a step removing foreign materials using the electric action of plasma which is generated by a plasma generating means 9 jointly with a physical action by the friction strain of a high speed gas flow which is generated at a pat type structure 5 placed close to the face of wafer 2.