| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal film, crystal substrate, and semiconductor device which are low in a dislocation density, using a crystal base containing dislocation. SOLUTION: A crystal layer 13 is formed on one surface side of a substrate 11 for growing a crystal via a buffer layer 12. In the crystal layer 13, void portions 13a, 13b are formed at an end to which each dislocation D1 extends from the lower part. The void portions 13a, 13b allow the dislocation D1 and the upper part to be separated and prevent each dislocation D1 from transmitting to the upper part. When the displacements, expressed by a Burgers vector, of the dislocations D1 are preserved and new dislocations produce, the orientations of the displacements are changed by the void portions 13a, 13b. The void portions 13a, 13b enable the dislocations D1 to be uniformly blocked, thus, a crystal layer of a low dislocation density can be formed in the upper part by the void portions 13a, 13b. |
