MEMORY DEVICE DRIVING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a memory device driving method in which distribution of threshold voltage of cells in a NAND type flash memory device can be improved. SOLUTION: In a non-volatile memory device which has a plurality of blocks consisting of a plurality of memory strings constituted by connecting a plurality of memory cells in series and in which a program is performed after erasure is performed for a memory cell, this method has basically a stage in which data stored in a memory cell with a block unit is erased, and a stage in which weak program voltage is applied to a word line connected to an erased memory cell with a block unit. As distribution of threshold voltage is optimized after finish of an erasure cycle, after that, program stress can be minimized by performed program operation.