| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which is tested in a short time. SOLUTION: A DRAM is provided with an one shot pulse generating circuit 32 which is activated at the time of test mode in which it is tested whether each memory cell MC is normal or not and which raises a signalϕC to a 'H' level in a series of pulses in accordance with the rise of a sense amplifier activating signal SN to a 'H' level, and a power source noise generating circuit 33 causing a through current to flow in accordance with the change of the signalϕC to a 'H' level and generating a power source noise. Thus, since detecting and amplifying capability of a sense amplifier 20 is reduced, a memory cell MC in which initial defect is easy to occur can be detected in a short time.
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