发明名称 MAGNETORESISTANCE EFFECT MAGNETIC SENSOR AND MAGNETIC RECORDING REPRODUCER
摘要 PROBLEM TO BE SOLVED: To realize a magnetoresistance effect head which shows a low resistance and a high MR ratio at conventional room temperatures and suddenly reduces an MR ratio even though a bias voltage is applied to the head. SOLUTION: In a magnetic sensor of a structure, the magnetic sensor consists of a soft magnetic free layer 108, a non-magnetic layer 106 and a ferromagnetic fixed layer 105 and has a spin valve film with its fixed magnetization to a magnetic field which is sensed by the layer 105. The magnetization of the layer 108 is rotated according to the external magnetic field, and the angles relative to the magnetization of the layer 105 and the magnetization of the layer 108 are changed to generate a magnetoresistance effect. The absolute value of the magnetoresistance effect is set so that the value Vs of a bias voltage, which is applied from the layer 105 to the layer 108, has the highest value between higher than +0.2-lower than +0.8 V and lower than -0.2-higher than -0.8 V in a temperature range of 0 to 60 deg.C.
申请公布号 JP2002217030(A) 申请公布日期 2002.08.02
申请号 JP20010013958 申请日期 2001.01.23
申请人 HITACHI LTD 发明人 ITOU AKITOMO;HAYAKAWA JUN
分类号 G01R33/09;G11B5/39;H01F10/16;H01F10/30;H01F10/32;(IPC1-7):H01F10/16 主分类号 G01R33/09
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