| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that dissolved polyimide reacts to cured positive- type resist around the dissolved polyimide, the positive-type resist is cured and cannot be completely removed by plasma etching following to a pattern formation, and fail in an outer shape is caused by allowing the resist to remain on a peripheral semiconductor device since the amount of polyimide that is dissolved by a developing solution is large when the polyimide is patterned and formed in a semiconductor wafer. SOLUTION: Electrode pads a1 and to f3 are concentrically arranged at the center of a TEG element 102, and TEG circuit elements A to F are arranged at the outer periphery in the TEG element 102 so that the electrode pads a1 and f3 are surrounded, thus setting the polyimide 5 to be dissolved in a pattern formation of the polyimide 5 to merely the electrode pads a1 to f3 for reducing the amount of polyimide 5, and at the same time preventing the fail in the outer shape of the peripheral semiconductor device 2 since a resist residue 8 is generated within the TEG circuit elements A to F even if the resist residue 8 is generated.
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