METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, AND BASE FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method, which prevents cracks in a nitride semiconductor film from occurring by controlling the thermal expansion coefficient difference between a nitride semiconductor and a substrate of a material different from the nitride semiconductor, and to provide a method, which manufactures a nitride semiconductor substrate without cracks. SOLUTION: A breakable layer is arranged on a mother substrate, and a nitride semiconductor layer is formed on the breakable layer. A thin silicon substrate grows on a main surface of a sapphire substrate, for the nitride semiconductor layer to grow thick. Then, the silicon substrate is removed by etching, to obtain the nitride semiconductor substrate as the nitride semiconductor layer.