| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser which has high efficiency and low heat resistance, and is suitable for the oscillation of lasers with wavelengths >=1μm. SOLUTION: On the surface of a substrate made of a 1st semiconductor with a 1st grating constant, a lower multilayered mirror is arranged. The lower multilayered mirror has a laminate structure wherein a 1st layer formed by oxidizing a 2nd semiconductor and a 2nd layer made of a 3rd semiconductor are laminated by turns. On the loser multilayered mirror, a strain-reducing layer 3 is arranged which is made of a 4th semiconductor having a 2nd grating constant different from the 1st grating constant. On the strain reducing layer 3, an active layer 12 is arranged. The active layer 12 includes a light emitting area made of a 5th semiconductor having a 3rd grating constant different from the 1st and 2nd grating constants. On the active layer 12, an upper multilayered mirror is arranged.
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