| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of stacking faults in a butt joint growth process in an optical semiconductor integrated device, and to provide method of manufacturing the same. SOLUTION: The optical semiconductor integrated device comprises a semiconductor multilayer structure 1, having a first function formed on a semiconductor substrate 5 having 100} planes as principal planes, and a semiconductor multilayer structure 2, having a second function bonded to the semiconductor multilayer structure 1 by the butt joint method. A main part of a side face 4, having a mesa structure on the bonded-side part of the semiconductor multilayer structure 1, is constituted of a gently tilted face, forming an angle with respect to the 100} planes which is smaller than that formed by 111} planes.
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