| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, together with its manufacturing method, which comprises a multilayer wiring, wherein a connection hole and a groove are formed in a simple process, improved in yield and reduced in processes and costs. SOLUTION: Photosensitized insulating films 1 and 2 are laminated on lower wiring layers 13 and 14, while a connection hole 1a is formed at the photosensitized insulating film 1 and a wiring groove 2a formed at the photosensitized insulating film 2. Upper wiring layers 3 and 4 are formed so as to fill the connection hole 1a and the groove 2a.
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