| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem where manufacturing cost is high and yield is low. SOLUTION: A second metal film 7 is deposited. A dielectric film is deposited. By patterning it by photoetching, a residual dielectric film 8 is formed which is left in a region for forming an MIM capacitor 1. A third metal film 9 is deposited. After that, the third metal film 9, the residual dielectric film 8 and the second metal film 7 are patterned by photoetching wherein the same resist pattern is used as a mask. As a result, a second layer wiring 10, an upper electrode 11, a dielectric layer 12, and a lower electrode 13 of the MIM capacitor 1 are formed.
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