| 摘要 |
PROBLEM TO BE SOLVED: To provide a cell capable of preventing the damage of a gate oxide film by connecting a gate to a wring in an uppermost layer, and a semiconductor device. SOLUTION: The cell 14 has a silicon substrate 1, an oxide film 2, insulating films 3-6, the gate oxide film 7, an input gate 8, wirings 9-11 and cell input terminals 12 and 13. Charges stored in the wiring 11 connected to the input gate 8 is preventing from being discharged only from the input gate 8 by connecting the input gate 8 to the wiring 11 in the uppermost layer among the wirings 9 to 11 in three layers, and the damage of the gate oxide film 7 can be prevented.
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