MANUFACTURING METHOD FOR SILICON OXIDE FILM ELECTRET, SILICON OXIDE FILM ELECTRET OBTAINED BY THE MANUFACTURING METHOD, AND ELECTRET CAPACITOR MICROPHONE PROVIDED WITH THE SILICON OXIDE FILM ELECTRET

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a silicon oxide film electret by which a sufficiently high deposition rate is obtained with less contained materials such as moisture and hydrogen, the silicon oxide film electret and an ECM(Electret Capacitor Microphone) provided with the silicon oxide film electret. SOLUTION: The manufacturing method for the silicon oxide film electret includes a process where oxygen is introduced in a vacuum processing chamber 2 in which a substrate 100 is placed, a process where the introduced oxygen is ionized by plasma treatment, a process where electrons collide with a silicon single body or a solid silicon compound whose major components are silicon and oxygen to generate gaseous silicon, a process where the gaseous silicon is ionized by plasma treatment, a process where a silicon oxide film is deposited on the substrate 100 on the basis of the reaction between the ionized oxygen and the silicon, and a process where the silicon oxide film is polarized.