| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing thin-film semiconductor element which can easily transfer a semiconductor element, such as a solar battery and can improve the manufacturing yield. SOLUTION: Porous silicon layers 3, 6 are formed to both surfaces of a single crystal silicon substrate 5 by anode formation method and thereby a compression stress of these porous silicon layers 3, 6 is applied to both surfaces of a single-crystal silicon substrate 5. An epitaxial film 4 is formed on the surface of porous silicon layer 3 through the epitaxial growth. In this case, with existence of the porous silicon films 3, 6, natural removal of the epitaxial film 4 from the single-crystal silicon substrate 5 is controlled, because the bending moment on the epitaxial film 4 can be almost removed. Thereafter, a solar battery element can be manufactured by removing the photoelectric converting part, consisting of the epitaxial film 4 from the single-crystal silicon substrate 5 at the separation layer 3A in the porous silicon layer 3.</p> |
