| 摘要 |
PROBLEM TO BE SOLVED: To disclose the termination structure for power trench MOS devices. SOLUTION: The MOS devices can be Schottky diodes, IGBT, or DMOS, depending on the kinds of semiconductor substrates prepared. The termination structure comprises a trench 220, a MOS gate 240, formed on the sidewall of the trench 220 as a spacer, a termination structure oxide layer 245, formed in the trench 220 to cover a portion of the spacer and to cover a bottom of the trench 220, and first and second electrodes, formed on the back surface and a front surface 260 of the semiconductor substrate, respectively. The trench is formed from the boundary of an active region to the end of the semiconductor substrate. The trench MOS devices are formed in the active region. For IGBT and DMOS, the second electrode is isolated from the MOS gate by an oxide layer, while, for Schottky diode, the second electrode is connected to the MOS gate. |
