SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve kink strength of the light output characteristics of an S3-type semiconductor laser. SOLUTION: This semiconductor laser satisfies conditions θ1<θ2, θ2>θ3, and θ3<θ4, where θ1 is the angle of a 1st growth shape line, connecting the lower lateral line of an upper oblique surface 4a to the lower lateral line of a lower oblique surface 3a of a 1st n-type clad layer 4 formed on a stepped substrate 1 with respect to the main surface; θ2 the angle of a 2nd growth shape line connecting the lower lateral lines of an upper oblique surface 5a of a 2nd n-type clad layer 5 on the 1st n-type clad layer 4 and a lower oblique surface 4a to the main surface, θ3 the angle of a 3rd growth shape line connecting the lower lateral lines of an upper oblique surface 6a of a 3rd n-type clad layer 6 on the 2nd n-type clad layer 5 and the lower oblique surface 5a with respect to the main surface; and θ4 the angle of a 4th growth shape line connecting the lower lateral lines of an upper oblique surface 7a of a 4th n-type clad layer 7 on the 3rd n-type clad layer 6 and the lower oblique surface 6a to the main surface.