| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device provided with a data bus which can efficiently transmit data at high speed. SOLUTION: A data bus amplifier circuit 44 amplifying voltage difference is provided on data buses DB, /DB delivering and receiving data between a memory cell and an input/output circuit. As the data buses DB, /DB has large parasitic capacity, complementary data of small amplitude can efficiently be transmitted at high speed at the time of read-out and write-in of data by providing such a data bus amplifier at the middle part.
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