发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce power consumption at the time of a self-refresh operation in a semiconductor memory device having hierarchical input/output line constitution. SOLUTION: At the time of the self-refresh operation, a delay circuit 22 outputs a delay signal ZBBUD responding to a self-refresh instruction signal ZBBU outputted form a self-refresh switching circuit 5. A switching driver 140 receives the delay signal ZBBUD, and makes a pair of global input/output line and a pair of local input/output line non-connection. Consequently, at the time of the self-refresh operation, voltage is not transferred between the pair of global input/output line and the pair of local input/output line.
申请公布号 JP2002216478(A) 申请公布日期 2002.08.02
申请号 JP20010012998 申请日期 2001.01.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 HAYAKAWA GORO
分类号 G11C11/409;G11C11/403;(IPC1-7):G11C11/409 主分类号 G11C11/409
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