| 摘要 |
Bit lines to which memory cells having a capacitor formed of a ferroelectric substance are connected are each divided into a plurality of line segments. These line segments can be electrically connected by transistors. To read data from the memory cells to the bit lines, the transistors are rendered conductive, and the parasitic capacitances of the bit lines are increased. To amplify data on a bit line using a sense amplifier, the transistors are rendered off and the parasitic capacitances of the bit lines are reduced.
|
