发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING WORD LINE BOOSTING CIRCUIT APPROPRIATE FOR LOW POWER CONSUMPTION AND WORD LINE BOOSTING METHOD THEREOF
摘要 PURPOSE: A semiconductor memory device having a word line boosting circuit appropriate for low power consumption and a word line boosting method thereof are provided, which restrict a boosting section using an ATD(Address Transfer Detect) and also prevents a boosting operation in an unnecessary section after data sensing. CONSTITUTION: The semiconductor memory device has a boosting circuit and a word line driving part(14) to apply a supply voltage level applied to a word line different from a power supply voltage. A sensing detection part(24) outputs a disable signal to disable the word line driving part and the boosting circuit by detecting a level difference from a selected memory cell of the above device. The sensing signals are signals from output ports of a sense amplifier sensing and amplifying a difference voltage of a bit line pair connected to the memory cell.
申请公布号 KR20020063017(A) 申请公布日期 2002.08.01
申请号 KR20010003680 申请日期 2001.01.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DU EUNG;SON, JONG PIL
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
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