发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING WORD LINE BOOSTING CIRCUIT APPROPRIATE FOR LOW POWER CONSUMPTION AND WORD LINE BOOSTING METHOD THEREOF |
摘要 |
PURPOSE: A semiconductor memory device having a word line boosting circuit appropriate for low power consumption and a word line boosting method thereof are provided, which restrict a boosting section using an ATD(Address Transfer Detect) and also prevents a boosting operation in an unnecessary section after data sensing. CONSTITUTION: The semiconductor memory device has a boosting circuit and a word line driving part(14) to apply a supply voltage level applied to a word line different from a power supply voltage. A sensing detection part(24) outputs a disable signal to disable the word line driving part and the boosting circuit by detecting a level difference from a selected memory cell of the above device. The sensing signals are signals from output ports of a sense amplifier sensing and amplifying a difference voltage of a bit line pair connected to the memory cell.
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申请公布号 |
KR20020063017(A) |
申请公布日期 |
2002.08.01 |
申请号 |
KR20010003680 |
申请日期 |
2001.01.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DU EUNG;SON, JONG PIL |
分类号 |
G11C5/14;(IPC1-7):G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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